\u0160estihrann\u00fd nitrid b\u00f3ru se st\u00e1v\u00e1 p\u0159evratn\u00fdm materi\u00e1lem, kter\u00fd d\u00edky sv\u00e9 jedine\u010dn\u00e9 kombinaci tepeln\u00fdch, elektrick\u00fdch a mechanick\u00fdch vlastnost\u00ed \u0159e\u0161\u00ed kritick\u00e9 v\u00fdzvy v modern\u00ed polovodi\u010dov\u00e9 technologii.<\/p>\n
\u2022 Vynikaj\u00edc\u00ed tepeln\u00fd management<\/strong>: h-BN dosahuje v\u00fdjime\u010dn\u00e9 tepeln\u00e9 vodivosti v rovin\u011b 585 W\/m-K, co\u017e umo\u017e\u0148uje efektivn\u00ed odvod tepla ve v\u00fdkonn\u00fdch 3D integrovan\u00fdch obvodech a architektur\u00e1ch stohovan\u00fdch za\u0159\u00edzen\u00ed.<\/p>\n \u2022 Velmi n\u00edzk\u00fd dielektrick\u00fd v\u00fdkon<\/strong>: Amorfn\u00ed BN filmy dosahuj\u00ed dielektrick\u00e9 konstanty a\u017e 1,78, \u010d\u00edm\u017e se bl\u00ed\u017e\u00ed vlastnostem vzduchu p\u0159i zachov\u00e1n\u00ed pr\u016fraznosti 7,3 MV\/cm pro pokro\u010dil\u00e9 propojovac\u00ed aplikace.<\/p>\n \u2022 Vylep\u0161en\u00e1 v\u00fdkonnost 2D materi\u00e1l\u016f<\/strong>: h-BN substr\u00e1ty zvy\u0161uj\u00ed pohyblivost nosi\u010d\u016f grafenu z 5 000-10 000 cm\u00b2\/V-s na 20 000-60 000 cm\u00b2\/V-s, co\u017e p\u0159edstavuje revoluci v elektronick\u00fdch za\u0159\u00edzen\u00edch p\u0159\u00ed\u0161t\u00ed generace.<\/p>\n \u2022 \u0160k\u00e1lovateln\u00e9 metody synt\u00e9zy<\/strong>: Techniky CVD, ALD a MOCVD umo\u017e\u0148uj\u00ed v\u00fdrobu v m\u011b\u0159\u00edtku desti\u010dek s kontrolou tlou\u0161\u0165ky na atom\u00e1rn\u00ed \u00farovni, co\u017e umo\u017e\u0148uje komer\u010dn\u00ed integraci pro v\u00fdrobu polovodi\u010d\u016f.<\/p>\n \u2022 Vynikaj\u00edc\u00ed dielektrick\u00e1 spolehlivost<\/strong>: h-BN vykazuje pr\u016frazn\u00e1 pole p\u0159esahuj\u00edc\u00ed 15 MV\/cm a svodov\u00e9 proudy 10-\u2078 a\u017e 10-\u00b9\u2070 A\/cm\u00b2, \u010d\u00edm\u017e v\u00fdrazn\u011b p\u0159ekon\u00e1v\u00e1 tradi\u010dn\u00ed materi\u00e1ly jako nitrid k\u0159em\u00edku a oxid hlinit\u00fd.<\/p>\n Konvergence v\u00fdjime\u010dn\u00fdch vlastnost\u00ed a vysp\u011bl\u00fdch technik synt\u00e9zy stav\u00ed nitrid hexagon\u00e1ln\u00edho boru do pozice z\u00e1kladn\u00edho materi\u00e1lu, kter\u00fd bude hnac\u00ed silou dal\u0161\u00ed vlny polovodi\u010dov\u00fdch inovac\u00ed, zejm\u00e9na v oblasti tepeln\u00e9ho managementu a ultra-n\u00edzk\u00fdch dielektrik.<\/p>\n \u0160estihrann\u00fd nitrid b\u00f3ru je d\u016fle\u017eit\u00fdm materi\u00e1lem pro rozvoj mikroelektroniky a polovodi\u010dov\u00e9 technologie. Tato tepeln\u011b a chemicky odoln\u00e1 \u017e\u00e1ruvzdorn\u00e1 slou\u010denina b\u00f3ru a dus\u00edku je strukturn\u011b podobn\u00e1 grafitu. P\u0159esto nab\u00edz\u00ed vynikaj\u00edc\u00ed tepelnou a chemickou stabilitu, kter\u00e9 se tradi\u010dn\u00ed materi\u00e1ly nemohou rovnat. Keramika s nitridem b\u00f3ru existuje v n\u011bkolika strukturn\u00edch form\u00e1ch, p\u0159i\u010dem\u017e hexagon\u00e1ln\u00ed varianta (h-BN) je z jeho polymorf\u016f nejstabiln\u011bj\u0161\u00ed. To, co \u010din\u00ed h-BN cenn\u00fdm pro modern\u00ed elektroniku, je jeho jedine\u010dn\u00e1 kombinace vlastnost\u00ed: vysok\u00e1 tepeln\u00e1 vodivost, siln\u00e1 elektrick\u00e1 izolace, odolnost proti opot\u0159eben\u00ed a chemik\u00e1li\u00edm a v\u00fdjime\u010dn\u00fd v\u00fdkon p\u0159i zv\u00fd\u0161en\u00fdch teplot\u00e1ch. V tomto d\u00edle prozkoum\u00e1me z\u00e1kladn\u00ed vlastnosti hexagon\u00e1ln\u00edho nitridu boru a dostaneme se k synt\u00e9ze a technik\u00e1m nan\u00e1\u0161en\u00ed. Probereme tak\u00e9 jeho roz\u0161i\u0159uj\u00edc\u00ed se vyu\u017eit\u00ed v mikroelektronice a polovodi\u010dov\u00fdch za\u0159\u00edzen\u00edch.<\/p>\n Nitrid boru krystalizuje ve vrstevnat\u00e9 hexagon\u00e1ln\u00ed struktu\u0159e pat\u0159\u00edc\u00ed do prostorov\u00e9 skupiny P6\u2083\/mmc. Ka\u017ed\u00e1 vrstva obsahuje atomy boru a dus\u00edku, kter\u00e9 se kovalentn\u011b v\u00e1\u017eou v hybridizaci sp\u00b2 a tvo\u0159\u00ed vo\u0161tinovou m\u0159\u00ed\u017eku, kde se ka\u017ed\u00fd atom boru spojuje se t\u0159emi atomy dus\u00edku a naopak. M\u0159\u00ed\u017ekov\u00e9 parametry m\u011b\u0159\u00ed a = 2,504 \u00c5 a c = 6,656 \u00c5 s mezivrstvovou vzd\u00e1lenost\u00ed 0,333 nm. Slab\u00e9 van der Waalsovy s\u00edly dr\u017e\u00ed tyto vrstvy pohromad\u011b a vytv\u00e1\u0159ej\u00ed charakteristick\u00e9 anizotropn\u00ed chov\u00e1n\u00ed, kter\u00e9 definuje mnoho vlastnost\u00ed h-BN. Rozd\u00edl elektronegativit mezi borem (2,04) a dus\u00edkem (3,04) vytv\u00e1\u0159\u00ed pol\u00e1rn\u00ed kovalentn\u00ed vazbu, kter\u00e1 vytv\u00e1\u0159\u00ed \u010d\u00e1ste\u010dn\u00fd iontov\u00fd charakter. To posiluje vnitrorovinnou strukturu.<\/p>\n Kubick\u00fd nitrid boru m\u00e1 sfaleritovou strukturu s tetraedricky v\u00e1zan\u00fdmi atomy boru a dus\u00edku v hybridizaci sp\u00b3. Poprv\u00e9 byl syntetizov\u00e1n v roce 1957 za vysok\u00e9ho tlaku a teploty a vykazuje tvrdost 4 500 kp\/mm\u00b2 ve srovn\u00e1n\u00ed s diamantem, kter\u00fd m\u00e1 tvrdost 8 000 kp\/mm\u00b2. Materi\u00e1l se vyzna\u010duje nep\u0159\u00edm\u00fdm p\u00e1smov\u00fdm rozp\u011bt\u00edm v rozmez\u00ed 5,4 a\u017e 7,0 eV a m\u0159\u00ed\u017ekovou konstantou 3,615 \u00c5. c-BN si zachov\u00e1v\u00e1 tepelnou stabilitu a\u017e do 1 000 \u00b0C, kdy za\u010d\u00edn\u00e1 oxidace. To p\u0159ekra\u010duje hranici stability diamantu 800 \u00b0C.<\/p>\n Amorfn\u00ed BN nab\u00edz\u00ed v\u00fdhody p\u0159i zpracov\u00e1n\u00ed d\u00edky n\u00edzkoteplotn\u00ed synt\u00e9ze. Filmy tenk\u00e9 pouh\u00e9 3 nm vykazuj\u00ed n\u00edzkou dielektrickou konstantu 1,78 p\u0159i 100 kHz. Dielektrick\u00e1 charakteristika se m\u011bn\u00ed v z\u00e1vislosti na teplot\u011b depozice. P\u0159i depozici atom\u00e1rn\u00edch vrstev p\u0159i 65 \u00b0C, 150 \u00b0C a 250 \u00b0C se dosahuje hodnot \u03ba 8,6, 4,6 a 4,3 v uveden\u00e9m po\u0159ad\u00ed.<\/p>\n \u0160estihrann\u00fd BN vykazuje pom\u011brn\u011b v\u00fdrazn\u00fd anizotropn\u00ed tepeln\u00fd transport. Monoizotopick\u00e9 krystaly h-BN \u00b9\u2070B dosahuj\u00ed p\u0159i pokojov\u00e9 teplot\u011b tepeln\u00e9 vodivosti v rovin\u011b 585 W m-\u00b9 K-\u00b9, co\u017e je p\u0159ibli\u017en\u011b o 80% v\u00edce ne\u017e u p\u0159irozen\u011b se vyskytuj\u00edc\u00edho h-BN. Jednovrstv\u00fd BN dosahuje 751 W\/mK a \u0159ad\u00ed se na druh\u00e9 m\u00edsto v tepeln\u00e9 vodivosti na jednotku hmotnosti mezi polovodi\u010di a izolanty. U monoizotopick\u00fdch vzork\u016f \u00b9\u2070B z\u016fst\u00e1v\u00e1 tepeln\u00e1 vodivost mimo rovinu mnohem ni\u017e\u0161\u00ed, a to 3,5 \u00b1 0,8 W m-\u00b9 K-\u00b9. P\u0159\u00ed\u010dn\u00e1 m\u011b\u0159en\u00ed exfoliovan\u00fdch vlo\u010dek vykazuj\u00ed silnou z\u00e1vislost na tlou\u0161\u0165ce. Hodnoty klesaj\u00ed z 8,1 \u00b1 0,5 W m-\u00b9 K-\u00b9 p\u0159i tlou\u0161\u0165ce 585 nm na 0,20 \u00b1 0,06 W m-\u00b9 K-\u00b9 pro 7 nm vlo\u010dky.<\/p>\n Monovrstva h-BN m\u00e1 p\u0159\u00edmou p\u00e1smovou mezeru 6,42 eV p\u0159i pokojov\u00e9 teplot\u011b, kter\u00e1 v objemov\u00e9 form\u011b p\u0159ech\u00e1z\u00ed na nep\u0159\u00edmou mezeru p\u0159ibli\u017en\u011b 5,95 eV. Dielektrick\u00e1 odezva vykazuje sm\u011brovou z\u00e1vislost. Dielektrick\u00e1 konstanta v rovin\u011b se pohybuje v rozmez\u00ed 6,82 a\u017e 6,93, zat\u00edmco hodnoty mimo rovinu se pohybuj\u00ed v rozmez\u00ed 3,29 a\u017e 3,76. Slo\u017eka v rovin\u011b z\u016fst\u00e1v\u00e1 relativn\u011b konstantn\u00ed pro vrstvy r\u016fzn\u00fdch tlou\u0161t\u011bk. Mimo rovinu se konstanta zvy\u0161uje p\u0159ibli\u017en\u011b o 15% od monovrstvy k objemov\u00e9.<\/p>\n Vysoce kvalitn\u00ed v\u00fdroba hexagon\u00e1ln\u00edho nitridu b\u00f3ru vy\u017eaduje pouze p\u0159esnou kontrolu parametr\u016f depozice a chemie prekurzor\u016f. Objevilo se n\u011bkolik zp\u016fsob\u016f synt\u00e9zy, z nich\u017e ka\u017ed\u00fd m\u00e1 pro konkr\u00e9tn\u00ed aplikace odli\u0161n\u00e9 v\u00fdhody.<\/p>\n P\u0159evl\u00e1daj\u00edc\u00ed metodou pro velkoplo\u0161nou synt\u00e9zu h-BN z\u016fst\u00e1v\u00e1 CVD. Tento proces vyu\u017e\u00edv\u00e1 borazin (B\u2083N\u2083H\u2086) nebo amoniak\u00e1ln\u00ed boran (NH\u2083BH\u2083) jako prekurzory z jednoho zdroje na katalytick\u00fdch kovov\u00fdch substr\u00e1tech, mezi n\u011b\u017e pat\u0159\u00ed Cu a Ni. N\u00edzkotlak\u00e1 CVD p\u0159i teplot\u00e1ch bl\u00edzk\u00fdch 1 000 \u00b0C a tlac\u00edch pod 250 Torr\u016f umo\u017e\u0148uje \u0159\u00edzen\u00fd r\u016fst vrstev. Cu substr\u00e1ty vykazuj\u00ed tlou\u0161\u0165ku, kter\u00e1 line\u00e1rn\u011b roste s dobou r\u016fstu, kdy\u017e parci\u00e1ln\u00ed tlak borazinu p\u0159ekro\u010d\u00ed 17 mTorr. R\u016fst LPCVD na substr\u00e1tech Si\u2083N\u2084\/Si vytv\u00e1\u0159\u00ed souvisl\u00e9 h-BN vrstvy s 3,4kr\u00e1t men\u0161\u00ed drsnost\u00ed ve srovn\u00e1n\u00ed s podkladov\u00fdmi povrchy. To umo\u017e\u0148uje dos\u00e1hnout pohyblivosti grafenu 1 200 cm\u00b2\/Vs oproti 400 cm\u00b2\/Vs na hol\u00e9m Si\u2083N\u2084.<\/p>\n ALD nab\u00edz\u00ed kontrolu tlou\u0161\u0165ky v atom\u00e1rn\u00edm m\u011b\u0159\u00edtku prost\u0159ednictv\u00edm sekven\u010dn\u00edch expozic prekurzor\u016f. Plazmou zes\u00edlen\u00e1 ALD nan\u00e1\u0161\u00ed h-BN p\u0159i 250-350 \u00b0C s rychlost\u00ed r\u016fstu 1,1 \u00c5\/cyklus pomoc\u00ed triethylbor\u00e1tu a N\u2082\/H\u2082 plazmatu. Teplotn\u00ed okno ALD zahrnuje 80-175 \u00b0C pro BCl3 nebo TDMAB prekurzory s NH\u2083 reaktanty. Elektronov\u011b zes\u00edlen\u00e1 ALD dosahuje depozice p\u0159i pokojov\u00e9 teplot\u011b pomoc\u00ed borazinu a expozice elektron\u016f s maxim\u00e1ln\u00ed rychlost\u00ed r\u016fstu 3,2 \u00c5\/cyklus p\u0159i energi\u00edch elektron\u016f 80-160 eV.<\/p>\n MOCVD umo\u017e\u0148uje dos\u00e1hnout stejnom\u011brnosti v m\u011b\u0159\u00edtku desti\u010dek pomoc\u00ed prekurzor\u016f triethylboranu (TEB) a NH\u2083. MOCVD s pulzn\u00edm re\u017eimem p\u0159i 1 000 \u00b0C dosahuje konformn\u00edho r\u016fstu nad nanodr\u00e1tky na b\u00e1zi Si s rozte\u010d\u00ed 45 nm a pom\u011brem stran 7:1. Rychlost r\u016fstu dosahuje 70 nm\/min p\u0159i spr\u00e1vn\u00e9m \u0159\u00edzen\u00ed toku TEB. Proces pot\u0159ebuje pouze teplotu nad 950 \u00b0C pro podm\u00ednky s vysok\u00fdm obsahem amoniaku a vysok\u00fdm tlakem.<\/p>\n Induk\u010dn\u011b v\u00e1zanou plazmovou CVD se syntetizuje v\u00edcevrstv\u00fd h-BN na k\u0159emeni a Si p\u0159i 400-500 \u00b0C za pou\u017eit\u00ed borazinu. Optim\u00e1ln\u00ed podm\u00ednky zahrnuj\u00ed teplotu substr\u00e1tu 500 \u00b0C a v\u00fdkon 180 W RF s kombinovan\u00fdmi nosn\u00fdmi plyny H\u2082\/N\u2082. T\u00edm se vytv\u00e1\u0159ej\u00ed filmy o tlou\u0161\u0165ce v\u011bt\u0161\u00ed ne\u017e 50 nm.<\/p>\n Kovov\u00e9 substr\u00e1ty, jako je Cu a Ni, pot\u0159ebuj\u00ed pouze procesy p\u0159enosu po r\u016fstu, kter\u00e9 vn\u00e1\u0161ej\u00ed kontaminaci a mechanick\u00e9 po\u0161kozen\u00ed. Nekatalytick\u00e9 substr\u00e1ty jako SiO\u2082 a saf\u00edr vy\u017eaduj\u00ed teploty nad 900 \u00b0C k p\u0159ekon\u00e1n\u00ed energetick\u00fdch bari\u00e9r. Epitaxn\u00ed r\u016fst na Si\u2083N\u2084 eliminuje p\u0159enosov\u00e9 kroky p\u0159i zachov\u00e1n\u00ed kompatibility se zpracov\u00e1n\u00edm polovodi\u010d\u016f.<\/p>\n Popsan\u00e9 mo\u017enosti synt\u00e9zy umo\u017e\u0148uj\u00ed \u0159e\u0161it kritick\u00e9 v\u00fdzvy v modern\u00edch polovodi\u010dov\u00fdch za\u0159\u00edzen\u00edch.<\/p>\n Amorfn\u00ed vrstvy nitridu boru o tlou\u0161\u0165ce 3 nm dosahuj\u00ed ultran\u00edzk\u00fdch dielektrick\u00fdch konstant 1,78 p\u0159i 100 kHz a 1,16 p\u0159i 1 MHz. Tyto hodnoty se bl\u00ed\u017e\u00ed dielektrick\u00e9 konstant\u011b vzduchu p\u0159i zachov\u00e1n\u00ed pr\u016fraznosti 7,3 MV\/cm. A-BN tedy zabra\u0148uje dif\u00fazi m\u011bdi do k\u0159em\u00edku za n\u00e1ro\u010dn\u00fdch podm\u00ednek a prodlu\u017euje \u017eivotnost za\u0159\u00edzen\u00ed o t\u0159i \u0159\u00e1dy ve srovn\u00e1n\u00ed s nechr\u00e1n\u011bn\u00fdmi strukturami. Vertik\u00e1ln\u011b strukturovan\u00fd napra\u0161ovan\u00fd h-BN vykazuje p\u0159i teplot\u00e1ch depozice pod 400 \u00b0C tepelnou vodivost v rovin\u011b 57 W\/m*K. To umo\u017e\u0148uje spolehliv\u00e9 \u0161k\u00e1lov\u00e1n\u00ed do dev\u00edti v\u00fdkonn\u00fdch \u00farovn\u00ed v 3D integrovan\u00fdch obvodech.<\/p>\n \u0160estihrann\u00fd BN poskytuje hladk\u00fd povrch, kter\u00fd zvy\u0161uje pohyblivost grafenov\u00fdch nosi\u010d\u016f z 5 000-10 000 cm\u00b2\/V-s na SiO\u2082 na 20 000-60 000 cm\u00b2\/V-s. \u00dapln\u00e9 zapouzd\u0159en\u00ed sni\u017euje rozptyl ne\u010distot a\u017e o dva \u0159\u00e1dy p\u0159i n\u00edzk\u00fdch teplot\u00e1ch.<\/p>\n N\u011bkolikavrstv\u00fd h-BN vykazuje pr\u016frazn\u00e1 pole p\u0159esahuj\u00edc\u00ed 10 MV\/cm s unikaj\u00edc\u00edmi proudy 10-\u2078 a\u017e 10-\u00b9\u2070 A\/cm\u00b2. Stavy hradel platina\/hBN vykazuj\u00ed 500kr\u00e1t ni\u017e\u0161\u00ed svodov\u00e9 pole ne\u017e konfigurace na b\u00e1zi zlata a dosahuj\u00ed dielektrick\u00e9 pevnosti nejm\u00e9n\u011b 25 MV\/cm.<\/p>\n Pokryt\u00ed zlat\u00fdch nanop\u00e1sk\u016f hBN sni\u017euje rychlost n\u00e1r\u016fstu teploty o 40% a zvy\u0161uje hustotu pr\u016frazn\u00e9ho proudu o 30%. hBN na SiGe nanodr\u00e1tc\u00edch sni\u017euje provozn\u00ed teplotu o 500 K p\u0159i optick\u00e9m buzen\u00ed.<\/p>\n P\u0159esn\u00e9 metody charakterizace ur\u010duj\u00ed, zda hexagon\u00e1ln\u00ed nitrid boru spl\u0148uje p\u0159\u00edsn\u00e9 po\u017eadavky na elektronickou integraci.<\/p>\n Struktury kondenz\u00e1tor\u016f kov-izol\u00e1tor-kov umo\u017e\u0148uj\u00ed p\u0159\u00edmou extrakci dielektrick\u00fdch konstant pomoc\u00ed m\u011b\u0159en\u00ed kapacity a nap\u011bt\u00ed. Mimo rovinu se permitivita zu\u017euje na 3,4 \u00b1 0,2. Nap\u011b\u0165ov\u00e9 testy s nar\u016fstaj\u00edc\u00edm nap\u011bt\u00edm m\u011b\u0159\u00ed pr\u016frazn\u00e9 chov\u00e1n\u00ed. Tenk\u00e9 nanovrstvy dosahuj\u00ed pr\u016frazn\u00fdch pol\u00ed 15,7 MV\/cm p\u0159i nulov\u00e9m mechanick\u00e9m nap\u011bt\u00ed a 3nm vrstvy dosahuj\u00ed 21 MV\/cm. Tlou\u0161\u0165ka m\u00e1 velk\u00fd vliv na dielektrickou pevnost. Vzorky o tlou\u0161\u0165ce 4,6 nm vykazuj\u00ed E63.2% 15,1 MV\/cm, kter\u00e1 u 41,3 nm film\u016f kles\u00e1 na 10,4 MV\/cm.<\/p>\n Termoreflexe v \u010dasov\u00e9 oblasti s prom\u011bnlivou velikost\u00ed bodu m\u011b\u0159\u00ed sou\u010dasn\u011b vodivost v rovin\u011b a skrz rovinu nastaven\u00edm rozm\u011br\u016f laserov\u00e9ho bodu vzhledem k hloubce tepeln\u00e9ho pr\u016fniku. Optoterm\u00e1ln\u00ed Ramanova spektroskopie sleduje posuny p\u00edk\u016f v z\u00e1vislosti na teplot\u011b, aby bylo mo\u017en\u00e9 z\u00edskat tepeln\u00e9 transportn\u00ed vlastnosti.<\/p>\n CVD h-BN dostupn\u00fd na trhu vykazuje podstatn\u011b hor\u0161\u00ed svodov\u00fd proud a elektrickou homogenitu ne\u017e materi\u00e1l z\u00edskan\u00fd mechanickou exfoliac\u00ed. Hustoty past\u00ed na rozhran\u00ed mezi h-BN a substr\u00e1ty Ge se pohybuj\u00ed od 10\u00b9\u00b9 do 10\u00b9\u00b2 cm-\u00b2 eV-\u00b9.<\/p>\n dielektrick\u00e1 konstanta nitridu b\u00f3ru p\u0159ekon\u00e1v\u00e1 rozsah 8,0-10 u nitridu k\u0159em\u00edku a sni\u017euje zpo\u017ed\u011bn\u00ed sign\u00e1lu ve vysokofrekven\u010dn\u00edch aplikac\u00edch. Pr\u016frazn\u00e1 pevnost je 61-200 kV\/mm. To je velk\u00e1 hodnota, proto\u017ee to znamen\u00e1, \u017ee oxid hlinit\u00fd s hodnotou 8,9-12 kV\/mm v\u00fdrazn\u011b zaost\u00e1v\u00e1.<\/p>\n \u0160estihrann\u00fd nitrid b\u00f3ru se d\u00edky sv\u00e9 v\u00fdjime\u010dn\u00e9 tepeln\u00e9 vodivosti, vynikaj\u00edc\u00edm dielektrick\u00fdm vlastnostem a chemick\u00e9 stabilit\u011b osv\u011bd\u010dil jako d\u016fle\u017eit\u00fd materi\u00e1l pro elektroniku p\u0159\u00ed\u0161t\u00ed generace. Pokroky v technik\u00e1ch synt\u00e9zy umo\u017enily v\u00fdrobu ve velk\u00e9m m\u011b\u0159\u00edtku a integraci do ultra-low-k propojen\u00ed, dielektrik hradel a syst\u00e9m\u016f tepeln\u00e9ho \u0159\u00edzen\u00ed. Materi\u00e1l p\u0159ekon\u00e1v\u00e1 tradi\u010dn\u00ed dielektrika v kritick\u00fdch standardech. To stav\u00ed h-BN do pozice \u017eivotn\u011b d\u016fle\u017eit\u00e9 technologie, kter\u00e1 bude optimalizovat polovodi\u010dov\u00e9 inovace a \u0159e\u0161it n\u00e1ro\u010dn\u00e9 po\u017eadavky modern\u00edch mikroelektronick\u00fdch za\u0159\u00edzen\u00ed.<\/p>\n Q1. \u010c\u00edm je hexagon\u00e1ln\u00ed nitrid b\u00f3ru cenn\u00fd pro aplikace v elektronice?<\/strong> \u0160estihrann\u00fd nitrid b\u00f3ru v sob\u011b spojuje n\u011bkolik kritick\u00fdch vlastnost\u00ed, d\u00edky nim\u017e je ide\u00e1ln\u00ed pro modern\u00ed elektroniku: vysokou tepelnou vodivost (a\u017e 585 W m-\u00b9 K-\u00b9 v rovin\u011b), vynikaj\u00edc\u00ed elektrickou izolaci s \u0161irokou p\u00e1smovou mezerou p\u0159ibli\u017en\u011b 6 eV, v\u00fdjime\u010dnou chemickou a tepelnou stabilitu p\u0159i zv\u00fd\u0161en\u00fdch teplot\u00e1ch a n\u00edzkou dielektrickou konstantu. Tyto vlastnosti umo\u017e\u0148uj\u00ed h-BN \u0159e\u0161it kl\u00ed\u010dov\u00e9 probl\u00e9my v polovodi\u010dov\u00fdch za\u0159\u00edzen\u00edch, v\u010detn\u011b odvodu tepla, sn\u00ed\u017een\u00ed zpo\u017ed\u011bn\u00ed sign\u00e1lu a spolehlivosti za\u0159\u00edzen\u00ed.<\/p>\n Q2. Jak\u00fd je hexagon\u00e1ln\u00ed nitrid boru ve srovn\u00e1n\u00ed s kubick\u00fdm nitridem boru?<\/strong> Hexagon\u00e1ln\u00ed nitrid b\u00f3ru (h-BN) m\u00e1 vrstevnatou strukturu podobnou grafitu s vazbou sp\u00b2 a je nejstabiln\u011bj\u0161\u00edm polymorfem za okoln\u00edch podm\u00ednek. Kubick\u00fd nitrid b\u00f3ru (c-BN) m\u00e1 strukturu podobnou diamantu s vazbou sp\u00b3 a vykazuje extr\u00e9mn\u00ed tvrdost (4 500 kp\/mm\u00b2), druhou nejvy\u0161\u0161\u00ed po diamantu. Zat\u00edmco c-BN vy\u017eaduje synt\u00e9zu za vysok\u00e9ho tlaku a teploty, h-BN lze deponovat p\u0159i ni\u017e\u0161\u00edch teplot\u00e1ch. Ka\u017ed\u00e1 forma slou\u017e\u00ed k jin\u00fdm aplikac\u00edm: h-BN vynik\u00e1 v elektronice a tepeln\u00e9m managementu, zat\u00edmco c-BN je preferov\u00e1n pro \u0159ezn\u00e9 n\u00e1stroje a brusiva.<\/p>\n Q3. Jak\u00e9 jsou hlavn\u00ed metody synt\u00e9zy hexagon\u00e1ln\u00edch vrstev nitridu boru?<\/strong> Mezi z\u00e1kladn\u00ed metody synt\u00e9zy pat\u0159\u00ed chemick\u00e1 depozice z par (CVD) p\u0159i teplot\u00e1ch bl\u00edzk\u00fdch 1 000 \u00b0C za pou\u017eit\u00ed prekurzor\u016f, jako je borazin nebo amoniak\u00e1ln\u00ed boran, depozice atom\u00e1rn\u00edch vrstev (ALD), kter\u00e1 umo\u017e\u0148uje kontrolu tlou\u0161\u0165ky v atom\u00e1rn\u00edm m\u011b\u0159\u00edtku p\u0159i teplot\u00e1ch 250-350 \u00b0C, kovov\u011b-organick\u00e1 CVD (MOCVD) pro rovnom\u011brnost v m\u011b\u0159\u00edtku desti\u010dek za pou\u017eit\u00ed triethylboranu a amoniaku a n\u00edzkoteplotn\u00ed techniky podporovan\u00e9 plazmou, kter\u00e9 umo\u017e\u0148uj\u00ed depozici p\u0159i 400-500 \u00b0C. Ka\u017ed\u00e1 z t\u011bchto metod nab\u00edz\u00ed odli\u0161n\u00e9 v\u00fdhody pro specifick\u00e9 aplikace a kompatibilitu se substr\u00e1tem.<\/p>\n Q4. Pro\u010d se jako substr\u00e1t pro grafenov\u00e1 za\u0159\u00edzen\u00ed pou\u017e\u00edv\u00e1 hexagon\u00e1ln\u00ed nitrid boru?<\/strong> Keramika z hexagon\u00e1ln\u00edho nitridu b\u00f3ru poskytuje atom\u00e1rn\u011b hladk\u00fd, chemicky inertn\u00ed povrch, kter\u00fd v\u00fdrazn\u011b zlep\u0161uje v\u00fdkonnost grafenu. Pokud je grafen um\u00edst\u011bn na substr\u00e1tech z h-BN nam\u00edsto tradi\u010dn\u00edho oxidu k\u0159emi\u010dit\u00e9ho, pohyblivost nosi\u010d\u016f se zv\u00fd\u0161\u00ed z 5 000-10 000 cm\u00b2\/V-s na 20 000-60 000 cm\u00b2\/V-s. \u00dapln\u00e9 zapouzd\u0159en\u00ed grafenu mezi vrstvy h-BN d\u00e1le sni\u017euje rozptyl ne\u010distot a\u017e o dva \u0159\u00e1dy, co\u017e m\u00e1 za n\u00e1sledek \u010dist\u0161\u00ed elektronick\u00e9 vlastnosti a vy\u0161\u0161\u00ed v\u00fdkon za\u0159\u00edzen\u00ed.<\/p>\n Q5. Jak\u00e9 dielektrick\u00e9 konstanty a pr\u016frazn\u00e9ho nap\u011bt\u00ed dosahuje hexagon\u00e1ln\u00ed nitrid boru?<\/strong> \u0160estihrann\u00fd nitrid b\u00f3ru vykazuje dielektrickou konstantu v rozmez\u00ed 4,0 a\u017e 4,4, co\u017e je ni\u017e\u0161\u00ed hodnota ne\u017e u nitridu k\u0159em\u00edku (8,0-10), tak\u017ee je v\u00fdhodn\u00fd pro sn\u00ed\u017een\u00ed zpo\u017ed\u011bn\u00ed sign\u00e1lu ve vysokofrekven\u010dn\u00edch aplikac\u00edch. Pr\u016frazn\u00e9 nap\u011bt\u00ed je p\u016fsobiv\u00e9, tenk\u00e9 vrstvy dosahuj\u00ed v z\u00e1vislosti na tlou\u0161\u0165ce pr\u016frazn\u00fdch pol\u00ed 15-21 MV\/cm. Amorfn\u00ed filmy BN mohou dosahovat ultran\u00edzk\u00fdch dielektrick\u00fdch konstant a\u017e 1,78 p\u0159i zachov\u00e1n\u00ed pr\u016frazn\u00e9ho nap\u011bt\u00ed 7,3 MV\/cm, co\u017e se bl\u00ed\u017e\u00ed vlastnostem vzduchu a z\u00e1rove\u0148 poskytuje robustn\u00ed elektrickou izolaci.<\/p>","protected":false},"excerpt":{"rendered":" Hexagonal Boron Nitride: Properties and Applications in Modern Electronics Key Takeaways Hexagonal boron nitride emerges as a game-changing material that […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ngg_post_thumbnail":0,"footnotes":""},"categories":[4],"tags":[],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/boronnitrideceramic.com\/cs\/wp-json\/wp\/v2\/posts\/320"}],"collection":[{"href":"https:\/\/boronnitrideceramic.com\/cs\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/boronnitrideceramic.com\/cs\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/boronnitrideceramic.com\/cs\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/boronnitrideceramic.com\/cs\/wp-json\/wp\/v2\/comments?post=320"}],"version-history":[{"count":1,"href":"https:\/\/boronnitrideceramic.com\/cs\/wp-json\/wp\/v2\/posts\/320\/revisions"}],"predecessor-version":[{"id":321,"href":"https:\/\/boronnitrideceramic.com\/cs\/wp-json\/wp\/v2\/posts\/320\/revisions\/321"}],"wp:attachment":[{"href":"https:\/\/boronnitrideceramic.com\/cs\/wp-json\/wp\/v2\/media?parent=320"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/boronnitrideceramic.com\/cs\/wp-json\/wp\/v2\/categories?post=320"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/boronnitrideceramic.com\/cs\/wp-json\/wp\/v2\/tags?post=320"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}Strukturn\u00ed formy a z\u00e1kladn\u00ed vlastnosti<\/h2>\n
Krystalov\u00e1 struktura hexagon\u00e1ln\u00edho BN (h-BN)<\/h3>\n
Varianty kubick\u00e9ho BN (c-BN) a amorfn\u00edho BN (a-BN)<\/h3>\n
Tepeln\u00e1 vodivost a charakteristiky odvodu tepla<\/h3>\n
Dielektrick\u00e9 vlastnosti a chov\u00e1n\u00ed p\u00e1smov\u00e9 propusti<\/h3>\n
Synt\u00e9za a metody nan\u00e1\u0161en\u00ed<\/h2>\n
Techniky chemick\u00e9ho napa\u0159ov\u00e1n\u00ed (CVD)<\/h3>\n
Proces nan\u00e1\u0161en\u00ed atom\u00e1rn\u00edch vrstev (ALD)<\/h3>\n
P\u0159\u00edstupy zalo\u017een\u00e9 na CVD s vyu\u017eit\u00edm kov\u016f a organick\u00fdch materi\u00e1l\u016f (MOCVD)<\/h3>\n
N\u00edzkoteplotn\u00ed metody r\u016fstu<\/h3>\n
Probl\u00e9my s v\u00fdb\u011brem substr\u00e1tu a integrac\u00ed<\/h3>\n
Aplikace v mikroelektronice a polovodi\u010dov\u00fdch za\u0159\u00edzen\u00edch<\/h2>\n
Dielektrick\u00fd materi\u00e1l s velmi n\u00edzk\u00fdm k pro propojen\u00ed<\/h3>\n
Substr\u00e1t a zapouzd\u0159ovac\u00ed vrstva pro 2D materi\u00e1ly<\/h3>\n
Dielektrika hradel v tranzistorech s poln\u00edm efektem<\/h3>\n
\u0158\u00edzen\u00ed tepla v architektur\u00e1ch stohovan\u00fdch za\u0159\u00edzen\u00ed<\/h3>\n
Charakterizace materi\u00e1lu a v\u00fdkonnostn\u00ed benchmarky<\/h2>\n
M\u011b\u0159en\u00ed dielektrick\u00e9 konstanty a pr\u016frazn\u00e9ho nap\u011bt\u00ed<\/h3>\n
Metody zkou\u0161en\u00ed tepeln\u00e9 vodivosti<\/h3>\n
Kvalita povrchu a vlastnosti rozhran\u00ed<\/h3>\n
Srovn\u00e1n\u00ed s tradi\u010dn\u00edmi dielektrick\u00fdmi materi\u00e1ly<\/h3>\n
Z\u00e1v\u011br<\/h2>\n
Nej\u010dast\u011bj\u0161\u00ed dotazy<\/h2>\n