\u0160es\u0165uholn\u00edkov\u00fd nitrid b\u00f3ru sa st\u00e1va prevratn\u00fdm materi\u00e1lom, ktor\u00fd rie\u0161i kritick\u00e9 v\u00fdzvy v modernej polovodi\u010dovej technol\u00f3gii v\u010faka svojej jedine\u010dnej kombin\u00e1cii tepeln\u00fdch, elektrick\u00fdch a mechanick\u00fdch vlastnost\u00ed.<\/p>\n
\u2022 Vynikaj\u00faci tepeln\u00fd mana\u017ement<\/strong>: h-BN dosahuje v\u00fdnimo\u010dn\u00fa tepeln\u00fa vodivos\u0165 v rovine 585 W\/m-K, \u010do umo\u017e\u0148uje \u00fa\u010dinn\u00fd odvod tepla vo vysokov\u00fdkonn\u00fdch 3D integrovan\u00fdch obvodoch a architekt\u00farach stohovan\u00fdch zariaden\u00ed.<\/p>\n \u2022 Mimoriadne n\u00edzky dielektrick\u00fd v\u00fdkon<\/strong>: Amorfn\u00e9 BN filmy dosahuj\u00fa dielektrick\u00e9 kon\u0161tanty a\u017e 1,78, \u010d\u00edm sa pribli\u017euj\u00fa vlastnostiam vzduchu pri zachovan\u00ed prieraznej pevnosti 7,3 MV\/cm pre pokro\u010dil\u00e9 prepojovacie aplik\u00e1cie.<\/p>\n \u2022 Vylep\u0161en\u00fd v\u00fdkon 2D materi\u00e1lu<\/strong>: h-BN substr\u00e1ty zvy\u0161uj\u00fa mobilitu graf\u00e9nov\u00fdch nosi\u010dov z 5 000 - 10 000 cm\u00b2\/V-s na 20 000 - 60 000 cm\u00b2\/V-s, \u010do predstavuje revol\u00faciu v elektronick\u00fdch zariadeniach novej gener\u00e1cie.<\/p>\n \u2022 \u0160k\u00e1lovate\u013en\u00e9 met\u00f3dy synt\u00e9zy<\/strong>: Techniky CVD, ALD a MOCVD umo\u017e\u0148uj\u00fa v\u00fdrobu na \u00farovni waferov s kontrolou hr\u00fabky na atom\u00e1rnej \u00farovni, \u010do umo\u017e\u0148uje komer\u010dn\u00fa integr\u00e1ciu do v\u00fdroby polovodi\u010dov.<\/p>\n \u2022 Vynikaj\u00faca dielektrick\u00e1 spo\u013eahlivos\u0165<\/strong>: h-BN vykazuje prierazn\u00e9 polia presahuj\u00face 15 MV\/cm a zvodov\u00e9 pr\u00fady od 10\u2078 do 10\u00b9\u2070 A\/cm\u00b2, \u010d\u00edm v\u00fdrazne prekon\u00e1va tradi\u010dn\u00e9 materi\u00e1ly ako nitrid krem\u00edka a oxid hlinit\u00fd.<\/p>\n Konvergencia v\u00fdnimo\u010dn\u00fdch vlastnost\u00ed a vyspel\u00fdch techn\u00edk synt\u00e9zy stavia hexagon\u00e1lny nitrid b\u00f3ru do poz\u00edcie z\u00e1kladn\u00e9ho materi\u00e1lu, ktor\u00fd bude hnacou silou \u010fal\u0161ej vlny polovodi\u010dov\u00fdch inov\u00e1ci\u00ed, najm\u00e4 v oblasti tepeln\u00e9ho mana\u017ementu a ultra-n\u00edzkej k dielektrick\u00fdch aplik\u00e1ci\u00ed.<\/p>\n \u0160es\u0165uholn\u00edkov\u00fd nitrid b\u00f3ru je d\u00f4le\u017eit\u00fdm materi\u00e1lom pre rozvoj mikroelektroniky a polovodi\u010dovej technol\u00f3gie. T\u00e1to tepelne a chemicky odoln\u00e1 \u017eiaruvzdorn\u00e1 zl\u00fa\u010denina b\u00f3ru a dus\u00edka je \u0161truktur\u00e1lne podobn\u00e1 grafitu. Napriek tomu pon\u00faka vynikaj\u00facu tepeln\u00fa a chemick\u00fa stabilitu, ktorej sa tradi\u010dn\u00e9 materi\u00e1ly nem\u00f4\u017eu rovna\u0165. Keramika s nitridom b\u00f3ru existuje vo viacer\u00fdch \u0161trukt\u00farnych form\u00e1ch, pri\u010dom hexagon\u00e1lny variant (h-BN) je spomedzi jej polymorfov najstabilnej\u0161\u00ed. To, \u010do rob\u00ed h-BN cenn\u00fdm pre modern\u00fa elektroniku, je jeho jedine\u010dn\u00e1 kombin\u00e1cia vlastnost\u00ed: vysok\u00e1 tepeln\u00e1 vodivos\u0165, siln\u00e1 elektrick\u00e1 izol\u00e1cia, odolnos\u0165 vo\u010di opotrebovaniu a chemik\u00e1li\u00e1m a v\u00fdnimo\u010dn\u00fd v\u00fdkon pri zv\u00fd\u0161en\u00fdch teplot\u00e1ch. V tomto \u010dl\u00e1nku sa budeme zaobera\u0165 z\u00e1kladn\u00fdmi vlastnos\u0165ami hexagon\u00e1lneho nitridu b\u00f3ru a dostaneme sa k synt\u00e9ze a technik\u00e1m depoz\u00edcie. Rozoberieme aj jeho roz\u0161iruj\u00face sa aplik\u00e1cie v mikroelektronike a polovodi\u010dov\u00fdch zariadeniach.<\/p>\n Nitrid b\u00f3ru kry\u0161talizuje vo vrstevnatej hexagon\u00e1lnej \u0161trukt\u00fare patriacej do priestorovej skupiny P6\u2083\/mmc. Ka\u017ed\u00e1 vrstva obsahuje at\u00f3my b\u00f3ru a dus\u00edka, ktor\u00e9 sa kovalentne via\u017eu v hybridiz\u00e1cii sp\u00b2 a vytv\u00e1raj\u00fa vo\u0161tinov\u00fa mrie\u017eku, kde sa ka\u017ed\u00fd at\u00f3m b\u00f3ru sp\u00e1ja s tromi at\u00f3mami dus\u00edka a naopak. Parametre mrie\u017eky s\u00fa a = 2,504 \u00c5 a c = 6,656 \u00c5 s medzivrstvovou vzdialenos\u0165ou 0,333 nm. Slab\u00e9 van der Waalsove sily dr\u017eia tieto vrstvy pohromade a vytv\u00e1raj\u00fa charakteristick\u00e9 anizotropn\u00e9 spr\u00e1vanie, ktor\u00e9 definuje mnoh\u00e9 vlastnosti h-BN. Rozdiel v elektronegativite medzi b\u00f3rom (2,04) a dus\u00edkom (3,04) vytv\u00e1ra pol\u00e1rnu kovalentn\u00fa v\u00e4zbu, ktor\u00e1 vytv\u00e1ra \u010diasto\u010dn\u00fd i\u00f3nov\u00fd charakter. To posil\u0148uje vn\u00fatroplo\u0161n\u00fa \u0161trukt\u00faru.<\/p>\n Kubick\u00fd nitrid b\u00f3ru m\u00e1 sfaleritov\u00fa \u0161trukt\u00faru s tetra\u00e9dricky viazan\u00fdmi at\u00f3mami b\u00f3ru a dus\u00edka v hybridiz\u00e1cii sp\u00b3. Prv\u00fdkr\u00e1t bol c-BN syntetizovan\u00fd v roku 1957 za vysok\u00e9ho tlaku a vysokej teploty a vykazuje tvrdos\u0165 4 500 kp\/mm\u00b2 v porovnan\u00ed s diamantom s tvrdos\u0165ou 8 000 kp\/mm\u00b2. Materi\u00e1l sa vyzna\u010duje nepriamym p\u00e1smov\u00fdm rozp\u00e4t\u00edm, ktor\u00e9 sa pohybuje od 5,4 do 7,0 eV, s mrie\u017ekovou kon\u0161tantou 3,615 \u00c5. c-BN si zachov\u00e1va tepeln\u00fa stabilitu a\u017e do 1 000 \u00b0C, kde sa za\u010d\u00edna oxid\u00e1cia. To presahuje prah stability diamantu 800 \u00b0C.<\/p>\n Amorfn\u00fd BN pon\u00faka v\u00fdhody spracovania v\u010faka n\u00edzkoteplotnej synt\u00e9ze. Filmy tenk\u00e9 a\u017e 3 nm vykazuj\u00fa n\u00edzku dielektrick\u00fa kon\u0161tantu 1,78 pri 100 kHz. Dielektrick\u00e1 charakteristika sa men\u00ed v z\u00e1vislosti od teploty depoz\u00edcie. Depoz\u00edcia at\u00f3movej vrstvy pri 65 \u00b0C, 150 \u00b0C a 250 \u00b0C poskytuje hodnoty \u03ba 8,6, 4,6 a 4,3.<\/p>\n Hexagon\u00e1lny BN vykazuje pomerne v\u00fdrazn\u00fd anizotropn\u00fd tepeln\u00fd transport. Monoizotopick\u00e9 kry\u0161t\u00e1ly h-BN \u00b9\u2070B dosahuj\u00fa rovinn\u00fa tepeln\u00fa vodivos\u0165 585 W m-\u00b9 K-\u00b9 pri izbovej teplote, \u010do je pribli\u017ene o 80% viac ako prirodzene sa vyskytuj\u00faci h-BN. Monovrstvov\u00fd BN dosahuje 751 W\/mK a rad\u00ed sa na druh\u00e9 miesto v tepelnej vodivosti na jednotku hmotnosti medzi polovodi\u010dmi a izolantmi. Vodivos\u0165 mimo roviny zost\u00e1va ove\u013ea ni\u017e\u0161ia na \u00farovni 3,5 \u00b1 0,8 W m-\u00b9 K-\u00b9 pre monoizotopick\u00e9 vzorky \u00b9\u2070B. Prie\u010dne rovinn\u00e9 merania exfoliovan\u00fdch vlo\u010diek vykazuj\u00fa siln\u00fa z\u00e1vislos\u0165 od hr\u00fabky. Hodnoty klesaj\u00fa z 8,1 \u00b1 0,5 W m-\u00b9 K-\u00b9 pri hr\u00fabke 585 nm na 0,20 \u00b1 0,06 W m-\u00b9 K-\u00b9 pre 7 nm vlo\u010dky.<\/p>\n Monovrstva h-BN m\u00e1 priamu medzeru 6,42 eV pri izbovej teplote, ktor\u00e1 v objemovej forme prech\u00e1dza na nepriamu medzeru pribli\u017ene 5,95 eV. Dielektrick\u00e1 odozva vykazuje smerov\u00fa z\u00e1vislos\u0165. Dielektrick\u00e1 kon\u0161tanta v rovine sa pohybuje v rozmedz\u00ed od 6,82 do 6,93, zatia\u013e \u010do hodnoty mimo roviny sa pohybuj\u00fa od 3,29 do 3,76. Rovinn\u00e1 zlo\u017eka zost\u00e1va relat\u00edvne kon\u0161tantn\u00e1 pre vrstvy s r\u00f4znou hr\u00fabkou. Kon\u0161tanta mimo roviny sa zvy\u0161uje pribli\u017ene o 15% od monovrstvy po objem.<\/p>\n Vysokokvalitn\u00e1 v\u00fdroba hexagon\u00e1lneho nitridu b\u00f3ru si vy\u017eaduje len presn\u00fa kontrolu parametrov depoz\u00edcie a ch\u00e9mie prekurzorov. Vzniklo viacero sp\u00f4sobov synt\u00e9zy, z ktor\u00fdch ka\u017ed\u00fd m\u00e1 odli\u0161n\u00e9 v\u00fdhody pre \u0161pecifick\u00e9 aplik\u00e1cie.<\/p>\n CVD zost\u00e1va dominantnou met\u00f3dou na ve\u013ekoplo\u0161n\u00fa synt\u00e9zu h-BN. Tento proces vyu\u017e\u00edva boraz\u00edn (B\u2083N\u2083H\u2086) alebo amoniak\u00e1lny bor\u00e1n (NH\u2083BH\u2083) ako prekurzory z jedn\u00e9ho zdroja na katalytick\u00fdch kovov\u00fdch substr\u00e1toch, ktor\u00e9 zah\u0155\u0148aj\u00fa Cu a Ni. N\u00edzkotlakov\u00e1 CVD pri teplot\u00e1ch bl\u00edzkych 1 000 \u00b0C a tlakoch pod 250 Torr umo\u017e\u0148uje riaden\u00fd rast vrstvy. Cu substr\u00e1ty vykazuj\u00fa hr\u00fabku, ktor\u00e1 sa line\u00e1rne zvy\u0161uje s \u010dasom rastu, ke\u010f parci\u00e1lny tlak boraz\u00ednu prekro\u010d\u00ed 17 mTorr. Rast LPCVD na substr\u00e1toch Si\u2083N\u2084\/Si vytv\u00e1ra s\u00favisl\u00e9 h-BN vrstvy s 3,4-kr\u00e1t men\u0161ou drsnos\u0165ou v porovnan\u00ed s podkladov\u00fdmi povrchmi. To prin\u00e1\u0161a pohyblivos\u0165 graf\u00e9nu 1 200 cm\u00b2\/Vs v porovnan\u00ed so 400 cm\u00b2\/Vs na holom Si\u2083N\u2084.<\/p>\n ALD pon\u00faka kontrolu hr\u00fabky v at\u00f3movom meradle prostredn\u00edctvom postupn\u00e9ho vystavenia prekurzorom. Plazmou zosilnen\u00e1 ALD deponuje h-BN pri 250-350 \u00b0C s r\u00fdchlos\u0165ou rastu 1,1 \u00c5\/cyklus pomocou trietylbor\u00e1tu a N\u2082\/H\u2082 plazmy. Teplotn\u00e9 okno ALD zah\u0155\u0148a 80-175 \u00b0C pre BCl3 alebo TDMAB prekurzory s NH\u2083 reaktantmi. Elektr\u00f3nmi zosilnen\u00e1 ALD dosahuje depoz\u00edciu pri izbovej teplote pomocou boraz\u00ednu a elektr\u00f3nov\u00fdch expoz\u00edci\u00ed s maxim\u00e1lnou r\u00fdchlos\u0165ou rastu 3,2 \u00c5\/cyklus pri energi\u00e1ch elektr\u00f3nov 80-160 eV.<\/p>\n MOCVD umo\u017e\u0148uje dosiahnu\u0165 rovnomernos\u0165 v rozsahu pl\u00e1tkov pomocou trietylbor\u00e1nu (TEB) a prekurzorov NH\u2083. Pulzn\u00fdm re\u017eimom MOCVD pri teplote 1 000 \u00b0C sa dosahuje konformn\u00fd rast na nanodr\u00f4toch na b\u00e1ze Si s rozstupom 45 nm a pomerom str\u00e1n 7:1. R\u00fdchlos\u0165 rastu dosahuje 70 nm\/min pri spr\u00e1vnom riaden\u00ed toku TEB. Proces potrebuje len teplotu nad 950 \u00b0C pre podmienky s vysok\u00fdm obsahom amoniaku a vysok\u00fdm tlakom.<\/p>\n Induk\u010dne viazanou plazmovou CVD sa syntetizuje viacvrstvov\u00fd h-BN na kremeni a Si pri 400-500 \u00b0C s pou\u017eit\u00edm boraz\u00ednu. Optim\u00e1lne podmienky zah\u0155\u0148aj\u00fa teplotu substr\u00e1tu 500 \u00b0C a v\u00fdkon 180 W RF s kombinovan\u00fdmi nosn\u00fdmi plynmi H\u2082\/N\u2082. T\u00fdmto sp\u00f4sobom sa vytv\u00e1raj\u00fa filmy s hr\u00fabkou viac ako 50 nm.<\/p>\n Kovov\u00e9 substr\u00e1ty, ako s\u00fa Cu a Ni, potrebuj\u00fa len postrastov\u00e9 prenosov\u00e9 procesy, ktor\u00e9 vn\u00e1\u0161aj\u00fa kontamin\u00e1ciu a mechanick\u00e9 po\u0161kodenie. Nekatalytick\u00e9 substr\u00e1ty ako SiO\u2082 a zaf\u00edr si vy\u017eaduj\u00fa teploty nad 900 \u00b0C na prekonanie energetick\u00fdch bari\u00e9r. Epitaxi\u00e1lny rast na Si\u2083N\u2084 eliminuje prenosov\u00e9 kroky pri zachovan\u00ed kompatibility so spracovan\u00edm polovodi\u010dov.<\/p>\n Op\u00edsan\u00e9 mo\u017enosti synt\u00e9zy umo\u017e\u0148uj\u00fa hexagon\u00e1lnemu nitridu b\u00f3ru rie\u0161i\u0165 kritick\u00e9 v\u00fdzvy v modern\u00fdch polovodi\u010dov\u00fdch zariadeniach.<\/p>\n Amorfn\u00e9 vrstvy nitridu b\u00f3ru s hr\u00fabkou 3 nm dosahuj\u00fa ultran\u00edzke dielektrick\u00e9 kon\u0161tanty 1,78 pri 100 kHz a 1,16 pri 1 MHz. Tieto hodnoty sa bl\u00ed\u017eia k dielektrickej kon\u0161tante vzduchu pri zachovan\u00ed prieraznej pevnosti 7,3 MV\/cm. A-BN teda zabra\u0148uje dif\u00fazii medi do krem\u00edka v n\u00e1ro\u010dn\u00fdch podmienkach a predl\u017euje \u017eivotnos\u0165 zariadenia o tri r\u00e1dy v porovnan\u00ed s nechr\u00e1nen\u00fdmi \u0161trukt\u00farami. Vertik\u00e1lne \u0161trukt\u00farovan\u00fd napra\u0161ovan\u00fd h-BN vykazuje priepustn\u00fa tepeln\u00fa vodivos\u0165 57 W\/m*K pri teplot\u00e1ch depoz\u00edcie pod 400 \u00b0C. To umo\u017e\u0148uje spo\u013eahliv\u00e9 \u0161k\u00e1lovanie na dev\u00e4\u0165 vysokov\u00fdkonn\u00fdch \u00farovn\u00ed v 3D integrovan\u00fdch obvodoch.<\/p>\n \u0160es\u0165uholn\u00edkov\u00fd BN poskytuje hladk\u00fd povrch, ktor\u00fd zvy\u0161uje pohyblivos\u0165 nosi\u010dov graf\u00e9nu z 5 000 - 10 000 cm\u00b2\/V-s na SiO\u2082 na 20 000 - 60 000 cm\u00b2\/V-s. \u00dapln\u00e9 zapuzdrenie zni\u017euje rozptyl ne\u010dist\u00f4t a\u017e o dva r\u00e1dy pri n\u00edzkych teplot\u00e1ch.<\/p>\n Nieko\u013ekovrstvov\u00fd h-BN vykazuje prierazn\u00e9 polia presahuj\u00face 10 MV\/cm s \u00fanikov\u00fdmi pr\u00fadmi 10 a\u017e 10\u00b9 A\/cm\u00b2. Platinov\u00e9\/hBN hradlov\u00e9 stohy vykazuj\u00fa 500-kr\u00e1t ni\u017e\u0161ie zvody ako konfigur\u00e1cie na b\u00e1ze zlata a dosahuj\u00fa dielektrick\u00fa pevnos\u0165 aspo\u0148 25 MV\/cm.<\/p>\n Pokrytie zlat\u00fdch nanop\u00e1sikov hBN zni\u017euje r\u00fdchlos\u0165 n\u00e1behu teploty o 40% a zvy\u0161uje hustotu prierazn\u00e9ho pr\u00fadu o 30%. hBN na SiGe nanodr\u00f4toch zni\u017euje pracovn\u00fa teplotu o 500 K pri optickom buden\u00ed.<\/p>\n Presn\u00e9 met\u00f3dy charakteriz\u00e1cie ur\u010duj\u00fa, \u010di hexagon\u00e1lny nitrid b\u00f3ru sp\u013a\u0148a pr\u00edsne po\u017eiadavky na elektronick\u00fa integr\u00e1ciu.<\/p>\n \u0160trukt\u00fary kondenz\u00e1torov kov-izol\u00e1tor-kov umo\u017e\u0148uj\u00fa priamu extrakciu dielektrick\u00fdch kon\u0161t\u00e1nt prostredn\u00edctvom kapacitno-nap\u00e4\u0165ov\u00fdch meran\u00ed. Mimorovinn\u00e1 permitivita sa zu\u017euje na 3,4 \u00b1 0,2. Nap\u00e4\u0165ov\u00e9 testy s n\u00e1razov\u00fdm nap\u00e4t\u00edm meraj\u00fa spr\u00e1vanie pri poruche. Tenk\u00e9 nanopl\u00e1\u0161te dosahuj\u00fa pri nulovom mechanickom nap\u00e4t\u00ed prierazn\u00e9 polia 15,7 MV\/cm a 3 nm vrstvy dosahuj\u00fa 21 MV\/cm. Hr\u00fabka v\u00fdrazne ovplyv\u0148uje dielektrick\u00fa pevnos\u0165. Vzorky s hr\u00fabkou 4,6 nm vykazuj\u00fa E63.2% 15,1 MV\/cm, ktor\u00e1 kles\u00e1 na 10,4 MV\/cm pri 41,3 nm filmoch.<\/p>\n Termoreflexia v \u010dasovej oblasti s premenlivou ve\u013ekos\u0165ou \u0161kv\u0155n meria s\u00fa\u010dasne vodivos\u0165 v rovine a cez rovinu nastaven\u00edm rozmerov laserovej \u0161kvrny vzh\u013eadom na h\u013abku tepeln\u00e9ho prieniku. Optoterm\u00e1lna Ramanova spektroskopia sleduje posuny p\u00edkov v z\u00e1vislosti od teploty s cie\u013eom z\u00edska\u0165 tepeln\u00e9 transportn\u00e9 vlastnosti.<\/p>\n CVD h-BN dostupn\u00fd na trhu vykazuje podstatne hor\u0161\u00ed \u00fanikov\u00fd pr\u00fad a elektrick\u00fa homogenitu ako materi\u00e1l z\u00edskan\u00fd mechanickou exfoli\u00e1ciou. Hustoty medzipriestorov\u00fdch pasc\u00ed medzi h-BN a Ge substr\u00e1tmi sa pohybuj\u00fa od 10\u00b9\u00b9 do 10\u00b9\u00b2 cm-\u00b2 eV-\u00b9.<\/p>\n dielektrick\u00e1 kon\u0161tanta nitridu b\u00f3ru prevy\u0161uje rozsah 8,0-10 nitridu krem\u00edka a zni\u017euje oneskorenie sign\u00e1lu vo vysokofrekven\u010dn\u00fdch aplik\u00e1ci\u00e1ch. Prielomov\u00e1 pevnos\u0165 sa pohybuje v rozmedz\u00ed 61-200 kV\/mm. To je ve\u013ek\u00fd v\u00fdznam, preto\u017ee to znamen\u00e1, \u017ee oxid hlinit\u00fd s hodnotou 8,9-12 kV\/mm v\u00fdrazne zaost\u00e1va.<\/p>\n \u0160es\u0165uholn\u00edkov\u00fd nitrid b\u00f3ru sa v\u010faka svojej v\u00fdnimo\u010dnej tepelnej vodivosti, vynikaj\u00facim dielektrick\u00fdm vlastnostiam a chemickej stabilite osved\u010dil ako d\u00f4le\u017eit\u00fd materi\u00e1l pre elektroniku novej gener\u00e1cie. Pokroky v technik\u00e1ch synt\u00e9zy umo\u017enili v\u00fdrobu vo ve\u013ekom meradle a umo\u017enili integr\u00e1ciu do ultra-low-k prepojen\u00ed, dielektr\u00edk hradiel a syst\u00e9mov tepeln\u00e9ho riadenia. Tento materi\u00e1l prekon\u00e1va tradi\u010dn\u00e9 dielektrik\u00e1 v kritick\u00fdch norm\u00e1ch. To stavia h-BN do poz\u00edcie \u017eivotne d\u00f4le\u017eitej technol\u00f3gie, ktor\u00e1 bude optimalizova\u0165 polovodi\u010dov\u00e9 inov\u00e1cie a rie\u0161i\u0165 n\u00e1ro\u010dn\u00e9 po\u017eiadavky modern\u00fdch mikroelektronick\u00fdch zariaden\u00ed.<\/p>\n Q1. \u010c\u00edm je hexagon\u00e1lny nitrid b\u00f3ru cenn\u00fd pre elektronick\u00e9 aplik\u00e1cie?<\/strong> \u0160es\u0165uholn\u00edkov\u00fd nitrid b\u00f3ru v sebe sp\u00e1ja nieko\u013eko kritick\u00fdch vlastnost\u00ed, v\u010faka ktor\u00fdm je ide\u00e1lny pre modern\u00fa elektroniku: vysok\u00fa tepeln\u00fa vodivos\u0165 (a\u017e 585 W m-\u00b9 K-\u00b9 v rovine), vynikaj\u00facu elektrick\u00fa izol\u00e1ciu so \u0161irokou p\u00e1smovou medzerou pribli\u017ene 6 eV, v\u00fdnimo\u010dn\u00fa chemick\u00fa a tepeln\u00fa stabilitu pri zv\u00fd\u0161en\u00fdch teplot\u00e1ch a n\u00edzku dielektrick\u00fa kon\u0161tantu. Tieto vlastnosti umo\u017e\u0148uj\u00fa h-BN rie\u0161i\u0165 k\u013e\u00fa\u010dov\u00e9 v\u00fdzvy v polovodi\u010dov\u00fdch zariadeniach vr\u00e1tane rozptylu tepla, zn\u00ed\u017eenia oneskorenia sign\u00e1lu a spo\u013eahlivosti zariadenia.<\/p>\n Q2. Ako sa d\u00e1 porovna\u0165 hexagon\u00e1lny nitrid b\u00f3ru s kubick\u00fdm nitridom b\u00f3ru?<\/strong> Hexagon\u00e1lny nitrid b\u00f3ru (h-BN) m\u00e1 vrstevnat\u00fa \u0161trukt\u00faru podobn\u00fa grafitu s v\u00e4zbou sp\u00b2 a je najstabilnej\u0161\u00edm polymorfom pri okolit\u00fdch podmienkach. Kubick\u00fd nitrid b\u00f3ru (c-BN) m\u00e1 \u0161trukt\u00faru podobn\u00fa diamantu s v\u00e4zbou sp\u00b3 a vykazuje extr\u00e9mnu tvrdos\u0165 (4 500 kp\/mm\u00b2), druh\u00fa najvy\u0161\u0161iu po diamante. Zatia\u013e \u010do c-BN si vy\u017eaduje vysokotlakov\u00fa synt\u00e9zu pri vysok\u00fdch teplot\u00e1ch, h-BN sa d\u00e1 deponova\u0165 pri ni\u017e\u0161\u00edch teplot\u00e1ch. Ka\u017ed\u00e1 forma sl\u00fa\u017ei na r\u00f4zne aplik\u00e1cie: h-BN vynik\u00e1 v elektronike a tepelnom mana\u017emente, zatia\u013e \u010do c-BN sa uprednost\u0148uje na rezn\u00e9 n\u00e1stroje a abraz\u00edva.<\/p>\n Q3. Ak\u00e9 s\u00fa hlavn\u00e9 met\u00f3dy synt\u00e9zy hexagon\u00e1lnych vrstiev nitridu b\u00f3ru?<\/strong> Medzi z\u00e1kladn\u00e9 met\u00f3dy synt\u00e9zy patr\u00ed chemick\u00e9 naparovanie (CVD) pri teplot\u00e1ch bl\u00edzkych 1 000 \u00b0C s pou\u017eit\u00edm prekurzorov, ako je boraz\u00edn alebo amoniak\u00e1lny bor\u00e1n, depoz\u00edcia at\u00f3mov\u00fdch vrstiev (ALD), ktor\u00e1 umo\u017e\u0148uje kontrolu hr\u00fabky v at\u00f3movom meradle pri 250 - 350 \u00b0C, kovovo-organick\u00e1 CVD (MOCVD) na dosiahnutie rovnomernosti v meradle do\u0161ti\u010diek s pou\u017eit\u00edm trietylbor\u00e1nu a amoniaku a n\u00edzkoteplotn\u00e9 techniky posilnen\u00e9 plazmou, ktor\u00e9 umo\u017e\u0148uj\u00fa depoz\u00edciu pri 400 - 500 \u00b0C. Ka\u017ed\u00e1 met\u00f3da pon\u00faka odli\u0161n\u00e9 v\u00fdhody pre \u0161pecifick\u00e9 aplik\u00e1cie a kompatibilitu so substr\u00e1tom.<\/p>\n Q4. Pre\u010do sa hexagon\u00e1lny nitrid b\u00f3ru pou\u017e\u00edva ako substr\u00e1t pre graf\u00e9nov\u00e9 zariadenia?<\/strong> Keramika z hexagon\u00e1lneho nitridu b\u00f3ru poskytuje at\u00f3movo hladk\u00fd, chemicky inertn\u00fd povrch, ktor\u00fd v\u00fdrazne zlep\u0161uje v\u00fdkonnos\u0165 graf\u00e9nu. Ke\u010f sa graf\u00e9n umiestni na substr\u00e1t h-BN namiesto tradi\u010dn\u00e9ho oxidu kremi\u010dit\u00e9ho, pohyblivos\u0165 nosi\u010dov sa zv\u00fd\u0161i z 5 000 - 10 000 cm\u00b2\/V-s na 20 000 - 60 000 cm\u00b2\/V-s. \u00dapln\u00e9 zapuzdrenie graf\u00e9nu medzi vrstvy h-BN \u010falej zni\u017euje rozptyl ne\u010dist\u00f4t a\u017e o dva r\u00e1dy, \u010do vedie k \u010distej\u0161\u00edm elektronick\u00fdm vlastnostiam a zv\u00fd\u0161en\u00e9mu v\u00fdkonu zariadenia.<\/p>\n Q5. Ak\u00fa dielektrick\u00fa kon\u0161tantu a prierazn\u00e9 nap\u00e4tie dosahuje hexagon\u00e1lny nitrid b\u00f3ru?<\/strong> \u0160es\u0165uholn\u00edkov\u00fd nitrid b\u00f3ru vykazuje dielektrick\u00fa kon\u0161tantu od 4,0 do 4,4, \u010do je menej ako nitrid krem\u00edka (8,0-10), tak\u017ee je v\u00fdhodn\u00fd na zn\u00ed\u017eenie oneskorenia sign\u00e1lu vo vysokofrekven\u010dn\u00fdch aplik\u00e1ci\u00e1ch. Prierazn\u00e9 nap\u00e4tie je p\u00f4sobiv\u00e9, pri\u010dom tenk\u00e9 vrstvy dosahuj\u00fa prierazn\u00e9 polia 15 - 21 MV\/cm v z\u00e1vislosti od hr\u00fabky. Amorfn\u00e9 filmy BN m\u00f4\u017eu dosahova\u0165 ultran\u00edzke dielektrick\u00e9 kon\u0161tanty a\u017e 1,78 pri zachovan\u00ed prierazn\u00e9ho nap\u00e4tia 7,3 MV\/cm, \u010d\u00edm sa pribli\u017euj\u00fa vlastnostiam vzduchu a z\u00e1rove\u0148 poskytuj\u00fa robustn\u00fa elektrick\u00fa izol\u00e1ciu.<\/p>","protected":false},"excerpt":{"rendered":" Hexagonal Boron Nitride: Properties and Applications in Modern Electronics Key Takeaways Hexagonal boron nitride emerges as a game-changing material that […]<\/p>\n","protected":false},"author":1,"featured_media":0,"comment_status":"closed","ping_status":"closed","sticky":false,"template":"","format":"standard","meta":{"site-sidebar-layout":"default","site-content-layout":"","ast-site-content-layout":"default","site-content-style":"default","site-sidebar-style":"default","ast-global-header-display":"","ast-banner-title-visibility":"","ast-main-header-display":"","ast-hfb-above-header-display":"","ast-hfb-below-header-display":"","ast-hfb-mobile-header-display":"","site-post-title":"","ast-breadcrumbs-content":"","ast-featured-img":"","footer-sml-layout":"","theme-transparent-header-meta":"default","adv-header-id-meta":"","stick-header-meta":"","header-above-stick-meta":"","header-main-stick-meta":"","header-below-stick-meta":"","astra-migrate-meta-layouts":"set","ast-page-background-enabled":"default","ast-page-background-meta":{"desktop":{"background-color":"var(--ast-global-color-4)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ast-content-background-meta":{"desktop":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"tablet":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""},"mobile":{"background-color":"var(--ast-global-color-5)","background-image":"","background-repeat":"repeat","background-position":"center center","background-size":"auto","background-attachment":"scroll","background-type":"","background-media":"","overlay-type":"","overlay-color":"","overlay-gradient":""}},"ngg_post_thumbnail":0,"footnotes":""},"categories":[4],"tags":[],"aioseo_notices":[],"_links":{"self":[{"href":"https:\/\/boronnitrideceramic.com\/sk\/wp-json\/wp\/v2\/posts\/320"}],"collection":[{"href":"https:\/\/boronnitrideceramic.com\/sk\/wp-json\/wp\/v2\/posts"}],"about":[{"href":"https:\/\/boronnitrideceramic.com\/sk\/wp-json\/wp\/v2\/types\/post"}],"author":[{"embeddable":true,"href":"https:\/\/boronnitrideceramic.com\/sk\/wp-json\/wp\/v2\/users\/1"}],"replies":[{"embeddable":true,"href":"https:\/\/boronnitrideceramic.com\/sk\/wp-json\/wp\/v2\/comments?post=320"}],"version-history":[{"count":1,"href":"https:\/\/boronnitrideceramic.com\/sk\/wp-json\/wp\/v2\/posts\/320\/revisions"}],"predecessor-version":[{"id":321,"href":"https:\/\/boronnitrideceramic.com\/sk\/wp-json\/wp\/v2\/posts\/320\/revisions\/321"}],"wp:attachment":[{"href":"https:\/\/boronnitrideceramic.com\/sk\/wp-json\/wp\/v2\/media?parent=320"}],"wp:term":[{"taxonomy":"category","embeddable":true,"href":"https:\/\/boronnitrideceramic.com\/sk\/wp-json\/wp\/v2\/categories?post=320"},{"taxonomy":"post_tag","embeddable":true,"href":"https:\/\/boronnitrideceramic.com\/sk\/wp-json\/wp\/v2\/tags?post=320"}],"curies":[{"name":"wp","href":"https:\/\/api.w.org\/{rel}","templated":true}]}}\u0160truktur\u00e1lne formy a z\u00e1kladn\u00e9 vlastnosti<\/h2>\n
Kry\u0161t\u00e1lov\u00e1 \u0161trukt\u00fara hexagon\u00e1lneho BN (h-BN)<\/h3>\n
Varianty kubick\u00e9ho BN (c-BN) a amorfn\u00e9ho BN (a-BN)<\/h3>\n
Tepeln\u00e1 vodivos\u0165 a charakteristiky odvodu tepla<\/h3>\n
Dielektrick\u00e9 vlastnosti a spr\u00e1vanie p\u00e1smovej medzery<\/h3>\n
Met\u00f3dy synt\u00e9zy a depoz\u00edcie<\/h2>\n
Techniky chemick\u00e9ho naparovania (CVD)<\/h3>\n
Proces nan\u00e1\u0161ania at\u00f3movej vrstvy (ALD)<\/h3>\n
Met\u00f3dy CVD (MOCVD)<\/h3>\n
Met\u00f3dy rastu pri n\u00edzkych teplot\u00e1ch<\/h3>\n
V\u00fdber substr\u00e1tu a probl\u00e9my s integr\u00e1ciou<\/h3>\n
Aplik\u00e1cie v mikroelektronike a polovodi\u010dov\u00fdch zariadeniach<\/h2>\n
Dielektrick\u00fd materi\u00e1l s ve\u013emi n\u00edzkym k pre prepojenia<\/h3>\n
Substr\u00e1t a zapuzdrovacia vrstva pre 2D materi\u00e1ly<\/h3>\n
Dielektrika br\u00e1ny v tranzistoroch s efektom po\u013ea<\/h3>\n
Tepeln\u00fd mana\u017ement v architekt\u00farach stohovan\u00fdch zariaden\u00ed<\/h3>\n
Charakteristika materi\u00e1lu a referen\u010dn\u00e9 hodnoty v\u00fdkonu<\/h2>\n
Meranie dielektrickej kon\u0161tanty a prierazn\u00e9ho nap\u00e4tia<\/h3>\n
Met\u00f3dy testovania tepelnej vodivosti<\/h3>\n
Kvalita povrchu a vlastnosti rozhrania<\/h3>\n
Porovnanie s tradi\u010dn\u00fdmi dielektrick\u00fdmi materi\u00e1lmi<\/h3>\n
Z\u00e1ver<\/h2>\n
\u010casto kladen\u00e9 ot\u00e1zky<\/h2>\n